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| SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. LOW VOLTAGE HIGH SPEED SWITCHING. FEATURES Including two(TR, Diode) devices in USV. (Ultra Super Mini type with 5 leads) Simplify circuit design. Reduce a quantity of parts and manufacturing process. A KTX302U EPITAXIAL PLANAR PNP TRANSISTOR SCHOTTKY BARRIER TYPE DIODE B B1 1 5 2 3 4 D DIM A A1 B B1 C D G H T EQUIVALENT CIRCUIT (TOP VIEW) 5 4 Marking 5 Type Name 4 T G MILLIMETERS _ 2.00 + 0.20 _ 1.3 + 0.1 _ 2.1 + 0.1 _ 1.25+ 0.1 0.65 0.2+0.10/-0.05 0-0.1 _ 0.9 + 0.1 0.15+0.1/-0.05 D1 Q1 CF 1 2 3 H C A1 C 1 2 3 1. D 1 2. Q 1 3. Q 1 4. Q 1 5. D 1 ANODE BASE EMITTER COLLECTOR CATHODE MARK SPEC Type Mark KTX302U Q1 hFE Rank : Y CF KTX302U Q1 hFE Rank : GR CH USV MAXIMUM RATINGS (Ta=25 TRANSISTOR Q1 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range DIODE (SBD) D1 CHARACTERISTIC Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (10mS) Junction Temperature Storage Temperature Range ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg RATING -50 -50 -5 -150 -30 100 150 -55~125 UNIT V V SYMBOL VRM VR IFM IO IFSM Tj Tstg RATING 30 30 300 200 1 125 -55 125 UNIT V V A 2003. 3. 11 Revision No : 1 1/4 KTX302U ELECTRICAL CHARACTERISTICS (Ta=25 ) TRANSISTOR Q1 CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Noise Figure Note) hFE Classification Y:120~240, SYMBOL ICBO IEBO hFE (Note) VCE(SAT) fT Cob NF GR:200~400. TEST CONDITION VCB=-50V, IE=0 VEB=-5V, IC=0 VCE=-6V, IC=-2 IC=-100 , IB=-10 MIN. 120 80 , Rg=10 TYP. -0.1 4 1.0 MAX. -0.1 -0.1 400 -0.3 7 10 dB V UNIT VCE=-10V, IC=-1 VCB=-10V, IE=0, f=1 VCE=-6V, IC=-0.1 , f=1 DIODE (SBD) D1 CHARACTERISTIC SYMBOL VF(1) Forward Voltage VF(2) VF(3) VF(4) Reverse Current Total Capacitance IR CT IF=1mA IF=10mA IF=100mA IF=200mA VR=30V VR=0, f=1 TEST CONDITION MIN. TYP. 0.22 0.29 0.38 0.43 50 MAX. 0.55 50 V UNIT 2003. 3. 11 Revision No : 1 2/4 KTX302U Q 1 (PNP TRANSISTOR) I C - V CE COLLECTOR CURRENT I C (mA) -240 -200 -160 -120 -80 -40 0 I B =-0.5mA I B =-0.2mA I B =0mA I B =-2.0mA I B =-1.5mA I B =-1.0mA COMMON EMITTER Ta=25 C h FE - I C 3k COMMON EMITTER DC CURRENT GAIN h FE 1k 500 300 Ta=100 C Ta=25 C VCE =-6V 100 50 Ta=-25 C VCE =-1V 0 -1 -2 -3 -4 -5 -6 -7 30 -0.1 -0.3 -1 -3 -10 -30 -100 -300 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT I C (mA) VCE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) -1 -0.5 -0.3 C VBE(sat) - I C -10 BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) -5 -3 COMMON EMITTER I C /IB =10 Ta=25 C COMMON EMITTER IC /IB =10 -0.1 -0.05 -0.03 00 =1 Ta -1 -0.5 -0.3 Ta=25 C Ta=-25 C -0.01 -0.1 -0.3 -1 -3 -10 -30 -100 -300 -0.1 -0.1 -0.3 -1 -3 -10 -30 -100 -300 COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) fT - IC TRANSITION FREQUENCY f T (MHz) 3k 1k 500 300 100 50 30 10 0.1 COMMON EMITTER VCE =-10V Ta=25 C I B - VBE -1k BASE CURRENT IB (A) -300 -100 5C Ta=-2 5C Ta=1 00 COMMON EMITTER VCE =-6V -30 -10 -3 -1 -0.3 0 -0.2 C 0.3 1 3 10 30 100 300 -0.4 -0.6 Ta=2 -0.8 -1.0 -1.2 COLLECTOR CURRENT I C (mA) BASE-EMITTER VOLTAGE VBE (V) 2003. 3. 11 Revision No : 1 3/4 KTX302U D 1 (SBD) I F - VF FORWARD CURRENT I F (mA) REVERSE CURRENT I R (A) 10 10 1 10 -1 10 -2 10 -3 10 -4 0 100 200 300 400 500 2 IR 10 5 Ta=25 C - VR Ta=25 C 1 0.5 0 5 10 15 20 25 30 FORWARD VOLTAGE V F (mV) REVERSE VOLTAGE VR (V) C T - VR 100 TOTAL CAPACITANCE C T (pF) 50 Ta=25 C f=1MHz 10 5 0 5 10 15 20 25 30 REVERSE VOLTAGE V R (V) 2003. 3. 11 Revision No : 1 4/4 |
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